The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
马晓华, 焦颖, 马平, 贺强, 马骥刚, 张凯, 张会龙, 张进成, 郝跃
The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
中国物理B
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2011, (12): 127305
-127305
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DOI: 10.1088/1674-1056/20/12/127305