High temperature characteristics of AlGaN/GaN high electron mobility transistors
杨丽媛, 郝跃, 马晓华, 张进成, 潘才渊, 马骥刚, 张凯, 马平
High temperature characteristics of AlGaN/GaN high electron mobility transistors
Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平)
中国物理B
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2011, (11): 117302
-117302
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DOI: 10.1088/1674-1056/20/11/117302