Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

吴丽娟, 胡盛东, 罗小蓉, 张波, 李肇基

Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基)

中国物理B . 2011, (10): 107101 -107101 . DOI: 10.1088/1674-1056/20/10/107101