Investigation of resistive switching behaviours in WO
3-based RRAM devices
李颖弢, 龙世兵, 吕杭炳, 刘琦, 王琴, 王艳, 张森, 连文泰, 刘肃, 刘明
Investigation of resistive switching behaviours in WO
3-based RRAM devices
Li Ying-Tao(李颖弢), Long Shi-Bing(龙世兵), Lü Hang-Bing(吕杭炳), Liu Qi(刘琦), Wang Qin(王琴), Wang Yan(王艳), Zhang Sen(张森), Lian Wen-Tai(连文泰), Liu Su(刘肃), and Liu Ming(刘明)
中国物理B
.
2011, (1): 17305
-017305
.
DOI: 10.1088/1674-1056/20/1/017305