Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

程萍, 张玉明, 张义门, 郭辉

Cheng Ping(程萍), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), and Guo Hui(郭辉)

中国物理B . 2010, (9): 97802 -097802 . DOI: 10.1088/1674-1056/19/9/097802