The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors
曹艳荣, 马晓华, 郝跃, 田文超
The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超)
中国物理B . 2010, (9): 97306 -097306 .  DOI: 10.1088/1674-1056/19/9/097306