AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition
毕志伟, 冯倩, 郝跃, 王党会, 马晓华, 张进成, 全思, 许晟瑞
AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition
Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞)
中国物理B
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2010, (7): 77303
-077303
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DOI: 10.1088/1674-1056/19/7/077303