Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition
徐静波, 张海英, 付晓君, 郭天义, 黄杰
Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition
Xu Jing-Bo(徐静波), Zhang Hai-Ying(张海英), Fu Xiao-Jun(付晓君), Guo Tian-Yi(郭天义), and Huang Jie(黄杰)
中国物理B . 2010, (3): 37302 -037302 .  DOI: 10.1088/1674-1056/19/3/037302