Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
吴玉新, 朱建军, 陈贵锋, 张书明, 江德生, 刘宗顺, 赵德刚, 王辉, 王玉田, 杨辉
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉)
中国物理B
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2010, (3): 36801
-036801
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DOI: 10.1088/1674-1056/19/3/036801