Effects of SiN
x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors
任凡, 郝智彪, 王磊, 汪莱, 李洪涛, 罗毅
Effects of SiN
x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors
Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅)
中国物理B
.
2010, (1): 17306
-017306
.
DOI: 10.1088/1674-1056/19/1/017306