Valence band variation in Si (110) nanowire induced by a covered insulator
许洪华, 刘晓彦, 何毓辉, 樊春, 杜刚, 孙爱东, 韩汝琦, 康晋锋
Valence band variation in Si (110) nanowire induced by a covered insulator
Xu Hong-Hua(许洪华), Liu Xiao-Yan(刘晓彦), He Yu-Hui(何毓辉), Fan Chun(樊春), Du Gang(杜刚), Sun Ai-Dong(孙爱东), Han Ru-Qi(韩汝琦), and Kang Jin-Feng(康晋锋)
中国物理B
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2010, (1): 14601
-014601
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DOI: 10.1088/1674-1056/19/1/014601