Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition
许高博, 徐秋霞
Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition
Xu Gao-Bo(许高博) and Xu Qiu-Xia(徐秋霞)
中国物理B . 2009, (2): 768 -772 .  DOI: 10.1088/1674-1056/18/2/059