Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature
胡仕刚, 郝跃, 马晓华, 曹艳荣, 陈炽, 吴笑峰
Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰)
中国物理B
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2009, (12): 5479
-5484
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DOI: 10.1088/1674-1056/18/12/058