Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates
陈刚, 柏松, 李哲洋, 吴鹏, 陈征, 韩平
Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates
Chen Gang(陈刚), Bai Song(柏松), Li Zhe-Yang(李哲洋), Wu Peng(吴鹏), Chen Zheng(陈征), and Han Pin(韩平)
中国物理B
.
2009, (10): 4474
-4478
.
DOI: 10.1088/1674-1056/18/10/062
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