Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation
王阳元, 郭辉, 王悦湖, 张玉明, 乔大勇, 张义门
Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation
Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Zhang Yu-Ming(张玉明), Qiao Da-Yong(乔大勇), and Zhang Yi-Men(张义门)
中国物理B
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2009, (10): 4470
-4473
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DOI: 10.1088/1674-1056/18/10/061