Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor

曹全君, 张义门, 贾立新

Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新)

中国物理B . 2009, (10): 4456 -4459 . DOI: 10.1088/1674-1056/18/10/058