The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates
吴玉新, 朱建军, 赵德刚, 刘宗顺, 江德生, 张书明, 王玉田, 王辉, 陈贵锋, 杨辉
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Wang Yu-Tian(王玉田), Wang Hui (王辉), Chen Gui-Feng(陈贵锋), and Yang Hui(杨辉)
中国物理B
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2009, (10): 4413
-4417
.
DOI: 10.1088/1674-1056/18/10/051