Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing
李炳生, 张崇宏, 杨义涛, 周丽宏, 张洪华
Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing
Li Bing-Sheng(李炳生), Zhang Chong-Hong(张崇宏), Yang Yi-Tao(杨义涛), Zhou Li-Hong(周丽宏), and Zhang Hong-Hua(张洪华)
中国物理B . 2009, (1): 246 -250 .  DOI: 10.1088/1674-1056/18/1/040