Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition
张丽平, 张建军, 尚泽仁, 胡增鑫, 耿新华, 赵颖
Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition
Zhang Li-Ping(张丽平), Zhang Jian-Jun(张建军), Shang Ze-Ren(尚泽仁), Hu Zeng-Xin(胡增鑫), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖)
中国物理B
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2008, (9): 3448
-3452
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DOI: 10.1088/1674-1056/17/9/051