Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition
刘磁辉, 刘秉策, 付竹西
Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition
Liu Ci-Hui(刘磁辉), Liu Bing-Ce(刘秉策), and Fu Zhu-Xi(付竹西)
中国物理B . 2008, (6): 2292 -2296 .  DOI: 10.1088/1674-1056/17/6/060