Influence of V/III ratio on the structural and photoluminescence properties of In <sub>0.52</sub>AlAs/ In <sub>0.53</sub>GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy

Influence of V/III ratio on the structural and photoluminescence properties of In _0.52AlAs/ In _0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy

高宏玲, 曾一平, 王宝强, 朱战平, 王占国

Influence of V/III ratio on the structural and photoluminescence properties of In _0.52AlAs/ In _0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy

Gao Hong-Ling(高宏玲), Zeng Yi-Ping(曾一平), Wang Bao-Qiang(王宝强), Zhu Zhan-Ping(朱战平), and Wang Zhan-Guo(王占国)

中国物理B . 2008, (3): 1119 -1123 . DOI: 10.1088/1674-1056/17/3/061