Research on reverse recovery characteristics of SiGeC p-i-n diodes
高勇, 刘静, 杨媛
Research on reverse recovery characteristics of SiGeC p-i-n diodes
Gao Yong (高勇), Liu Jing (刘静), Yang Yuan (杨媛)
中国物理B . 2008, (12): 4635 -4639 .  DOI: 10.1088/1674-1056/17/12/050