A new physics-based self-heating effect model for 4H-SiC MESFETs
曹全君, 张义门, 张玉明
A new physics-based self-heating effect model for 4H-SiC MESFETs
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
中国物理B . 2008, (12): 4622 -4626 .  DOI: 10.1088/1674-1056/17/12/048