Si
1Sb
2Te
3 phase change material for chalcogenide random access memory
张挺, 宋志棠, 刘波, 刘卫丽, 封松林, 陈邦明
Si
1Sb
2Te
3 phase change material for chalcogenide random access memory
Zhang Ting(张挺), Song Zhi-Tang(宋志棠), Liu Bo(刘波), Liu Wei-Li(刘卫丽), Feng Song-Lin(封松林), and Chen Bomy(陈邦明)
中国物理B
.
2007, (8): 2475
-2478
.
DOI: 10.1088/1009-1963/16/8/053