Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide
王超, 张义门, 张玉明, 马格林, 郭辉, 徐大庆
Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide
Wang Chao(王超), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Ma Ge-Lin(马格林), Guo Hui(郭辉), and Xu Da-Qing(徐大庆)
中国物理B
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2007, (8): 2455
-2461
.
DOI: 10.1088/1009-1963/16/8/050