Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)

刘红侠, 郝跃

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)

Liu Hong-Xia (刘红侠) and Hao Yue (郝跃)

中国物理B . 2007, (7): 2111 -2115 . DOI: 10.1088/1009-1963/16/7/052