A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs
曹全君, 张义门, 张玉明, 吕红亮, 王悦湖, 常远程, 汤晓燕
A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Lü Hong-Liana(吕红亮), Wang Yue-Hu(王悦湖), Chang Yuan-Cheng(常远程), and Tang Xiao-Yan(汤晓燕)
中国物理B
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2007, (4): 1097
-1100
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DOI: 10.1088/1009-1963/16/4/039