Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack
张雪锋, 徐静平, 黎沛涛, 李春霞, 官建国
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack
Zhang Xue-Feng(张雪锋), Xu Jing-Ping (徐静平), Lai Pui-To(黎沛涛), Li Chun-Xia(李春霞), and Guan Jian-Guo(官建国)
中国物理B . 2007, (12): 3820 -3826 .  DOI: 10.1088/1009-1963/16/12/044