Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices

李睿, 俞柳江, 董业民, 王庆东

Li Rui(李睿), Yu Liu-Jiang(俞柳江), Dong Ye-Min(董业民), and Wang Ching-Dong(王庆东)

中国物理B . 2007, (10): 3104 -3107 . DOI: 10.1088/1009-1963/16/10/047