Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
常远程, 张义门, 张玉明
Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
中国物理B . 2006, (3): 636 -640 .  DOI: 10.1088/1009-1963/15/3/032