A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
马 龙, 黄应龙, 张 杨, 杨富华, 王良臣
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣)
中国物理B
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2006, (10): 2422
-2426
.
DOI: 10.1088/1009-1963/15/10/039