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The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses
王彦刚, 许铭真, 谭长华, J.F.Zhang, 段小蓉
The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses
Wang Yan-Gang (王彦刚), Xu Ming-Zhen (许铭真), Tan Chang-Hua (谭长华), Zhang J.F., Duan Xiao-Rong (段小蓉)
中国物理B . 2005, (
9
): 1886 -1891 . DOI: 10.1088/1009-1963/14/9/036