Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC
高欣, 孙国胜, 李晋闽, 张永兴, 王雷, 赵万顺, 曾一平
Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC
Gao Xin (高欣), Sun Guo-Sheng (孙国胜), Li Jin-Min (李晋闽), Zhang Yong-Xin (张永兴), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Zeng Yi-Ping (曾一平)
中国物理B
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2005, (3): 599
-603
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DOI: 10.1088/1009-1963/14/3/031