Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET
郑中山, 刘忠立, 张国强, 李宁, 范楷, 张恩霞, 易万兵, 陈猛, 王曦
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦)
中国物理B
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2005, (3): 565
-570
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DOI: 10.1088/1009-1963/14/3/025