Temperature dependence of Hall electron density of GaN-based heterostructures
张金凤, 张进城, 郝跃
Temperature dependence of Hall electron density of GaN-based heterostructures
Zhang Jin-Feng (张金凤), Zhang Jin-Cheng (张进城), Hao Yue (郝跃)
中国物理B . 2004, (8): 1334 -1338 .  DOI: 10.1088/1009-1963/13/8/027