Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs

汤晓燕, 张义门, 张玉明, 郜锦侠

Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)

中国物理B . 2004, (7): 1110 -1113 . DOI: 10.1088/1009-1963/13/7/025