A compact I－V model for lightly-doped-drain MOSFETs
于春利, 杨林安, 郝跃
A compact I－V model for lightly-doped-drain MOSFETs
Yu Chun-Li (于春利), Yang Lin-An (杨林安), Hao Yue (郝跃)
中国物理B . 2004, (7): 1104 -1109 .  DOI: 10.1088/1009-1963/13/7/024