中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1104-1109.doi: 10.1088/1009-1963/13/7/024
于春利, 杨林安, 郝跃
Yu Chun-Li (于春利), Yang Lin-An (杨林安), Hao Yue (郝跃)
摘要: A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I-V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.
中图分类号: (Field effect devices)