中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1104-1109.doi: 10.1088/1009-1963/13/7/024

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A compact I－V model for lightly-doped-drain MOSFETs

于春利, 杨林安, 郝跃   

  1. Institute of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2003-06-04 修回日期:2004-03-01 出版日期:2004-07-05 发布日期:2005-07-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60206006).

A compact I－V model for lightly-doped-drain MOSFETs

Yu Chun-Li (于春利), Yang Lin-An (杨林安), Hao Yue (郝跃)   

  1. Institute of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2003-06-04 Revised:2004-03-01 Online:2004-07-05 Published:2005-07-05
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60206006).

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摘要： A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I－V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.

关键词: lightly-doped-drain MOSFET, hot carrier effect, velocity saturation, hyperbolic tangent

Abstract: A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I－V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.

Key words: lightly-doped-drain MOSFET, hot carrier effect, velocity saturation, hyperbolic tangent

中图分类号:  (Field effect devices)

  • 85.30.Tv
72.20.Ht (High-field and nonlinear effects) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)