Analytical model of electron transport characteristics for 4H-SiC material and devices
吕红亮, 张义门, 张玉明
Analytical model of electron transport characteristics for 4H-SiC material and devices
Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
中国物理B . 2004, (7): 1100 -1103 .  DOI: 10.1088/1009-1963/13/7/023