中国物理B ›› 2025, Vol. 34 ›› Issue (10): 109901-109901.doi: 10.1088/1674-1056/ae0c7b

• • 上一篇    

Corrigendum to “Enhanced thermoelectric properties of the topological phase of monolayer HfC”

Wenlai Mu(母文来)1, Nisar Muhammad(穆罕默德 尼萨)2, Baojuan Dong(董宝娟)3,4,5, Nguyen Tuan Hung(阮俊兴)6,†, Huaihong Guo(郭怀红)7,‡, Riichiro Saito(斋藤理一郎)8, Weijiang Gong(公卫江)9, Teng Yang(杨腾)1,3,§, and Zhidong Zhang(张志东)1   

  1. 1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China;
    2 Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China;
    3 Liaoning Academy of Materials, Shenyang 110167, China;
    4 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China;
    5 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China;
    6 Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan;
    7 College of Sciences, Liaoning Petrochemical University, Fushun 113001, China;
    8 Department of Physics, Tohoku University, Sendai 980-8578, Japan;
    9 College of Sciences, Northeastern University, Shenyang 110819, China
  • 收稿日期:2025-09-29 接受日期:2025-09-29 发布日期:2025-10-09
  • 通讯作者: Nguyen Tuan Hung, Huaihong Guo, Teng Yang E-mail:nguyen.tuan.hung.e4@tohoku.ac.jp;hhguo@alum.imr.ac.cn;yanghaiteng@msn.com

Corrigendum to “Enhanced thermoelectric properties of the topological phase of monolayer HfC”

Wenlai Mu(母文来)1, Nisar Muhammad(穆罕默德 尼萨)2, Baojuan Dong(董宝娟)3,4,5, Nguyen Tuan Hung(阮俊兴)6,†, Huaihong Guo(郭怀红)7,‡, Riichiro Saito(斋藤理一郎)8, Weijiang Gong(公卫江)9, Teng Yang(杨腾)1,3,§, and Zhidong Zhang(张志东)1   

  1. 1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China;
    2 Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China;
    3 Liaoning Academy of Materials, Shenyang 110167, China;
    4 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China;
    5 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China;
    6 Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan;
    7 College of Sciences, Liaoning Petrochemical University, Fushun 113001, China;
    8 Department of Physics, Tohoku University, Sendai 980-8578, Japan;
    9 College of Sciences, Northeastern University, Shenyang 110819, China
  • Received:2025-09-29 Accepted:2025-09-29 Published:2025-10-09
  • Contact: Nguyen Tuan Hung, Huaihong Guo, Teng Yang E-mail:nguyen.tuan.hung.e4@tohoku.ac.jp;hhguo@alum.imr.ac.cn;yanghaiteng@msn.com

摘要: Figure 3(d) in the paper [Chin. Phys. B 34 057301 (2025)] contained typos in the $ZT$ values. Figure A4 contained typo in the label. The correct figures are provided. This modification does not affect the result presented in the paper.

关键词: corrigendum, anomalous Seebeck effect, hafnium carbide, thermoelectric, $Z_{2}$ topological insulator

Abstract: Figure 3(d) in the paper [Chin. Phys. B 34 057301 (2025)] contained typos in the $ZT$ values. Figure A4 contained typo in the label. The correct figures are provided. This modification does not affect the result presented in the paper.

Key words: corrigendum, anomalous Seebeck effect, hafnium carbide, thermoelectric, $Z_{2}$ topological insulator

中图分类号:  (Errata and other corrections)

  • 99.10.-x
73.50.Lw (Thermoelectric effects) 31.15.A- (Ab initio calculations)