中国物理B ›› 2025, Vol. 34 ›› Issue (8): 87104-087104.doi: 10.1088/1674-1056/add4f8

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Anisotropic displacement threshold energy and defect distribution in diamond: PKA energy and temperature effect

Ke Wu(吴可)1, Zeyi Du(杜泽依)1, Hongyang Liu(刘洪洋)1, Nanyun Bao(包南云)1, Chengke Xu(许成科)1, Hongrui Wang(王泓睿)1, Qunchao Tong(童群超)1,2,3,†, Bo Chen(陈博)1,2,3, Dongdong Kang(康冬冬)1,2,3, Guang Wang(王广)1, and Jiayu Dai(戴佳钰)1,2,3,‡   

  1. 1 College of Science, National University of Defense Technology, Changsha 410073, China;
    2 Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China;
    3 Hunan Research Center of the Basic Discipline for Physical States, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2025-02-20 修回日期:2025-04-28 接受日期:2025-05-07 出版日期:2025-07-17 发布日期:2025-08-12
  • 通讯作者: Qunchao Tong, Jiayu Dai E-mail:tongqunchao@nudt.edu.cn;jydai@nudt.edu.cn
  • 基金资助:
    Project supported by the Science and Technology Innovation Program of Hunan Province, China (Grant No. 2021RC4026), the National Natural Science Foundation of China (Grant Nos. 12204538, 12104507, and 92365203), and Hunan Provincial Science Fund for Distinguished Young Scholars (Grant No. 2022JJ10060).

Anisotropic displacement threshold energy and defect distribution in diamond: PKA energy and temperature effect

Ke Wu(吴可)1, Zeyi Du(杜泽依)1, Hongyang Liu(刘洪洋)1, Nanyun Bao(包南云)1, Chengke Xu(许成科)1, Hongrui Wang(王泓睿)1, Qunchao Tong(童群超)1,2,3,†, Bo Chen(陈博)1,2,3, Dongdong Kang(康冬冬)1,2,3, Guang Wang(王广)1, and Jiayu Dai(戴佳钰)1,2,3,‡   

  1. 1 College of Science, National University of Defense Technology, Changsha 410073, China;
    2 Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China;
    3 Hunan Research Center of the Basic Discipline for Physical States, National University of Defense Technology, Changsha 410073, China
  • Received:2025-02-20 Revised:2025-04-28 Accepted:2025-05-07 Online:2025-07-17 Published:2025-08-12
  • Contact: Qunchao Tong, Jiayu Dai E-mail:tongqunchao@nudt.edu.cn;jydai@nudt.edu.cn
  • Supported by:
    Project supported by the Science and Technology Innovation Program of Hunan Province, China (Grant No. 2021RC4026), the National Natural Science Foundation of China (Grant Nos. 12204538, 12104507, and 92365203), and Hunan Provincial Science Fund for Distinguished Young Scholars (Grant No. 2022JJ10060).

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摘要： Diamond is a promising semiconductor material for future space exploration, owing to its unique atomic and electronic structures. However, diamond materials and related devices still suffer from irradiation damage under space irradiation involving high-energy irradiating particles. The study of the generation and evolution of point defects can help understand the irradiation damage mechanisms in diamond. This study systematically investigated the defect dynamics of diamond in 162 crystallographic directions uniformly selected on a spherical surface using molecular dynamics simulations, with primary knock-on atom (PKA) energies up to 20 keV, and temperatures ranging from 300 K to 1800 K. The results reveal that the displacement threshold energy of diamond changes periodically with crystallographic directions, which is related to the shape of potential energy surface along that direction. Additionally, the number of residual defects correlates positively with PKA energy. However, temperature has dual competing effects: while it enhances the probability of atomic displacement, it simultaneously suppresses the probability of defect formation by accelerating defect recombination. The calculation of sparse radial distribution function indicates that the defect distribution shows a certain degree of similarity in the short-range region across different PKA energies. As the PKA energy increases, defect clusters tend to become larger in size and more numerous in quantity. This study systematically investigates the anisotropy of displacement threshold energy and elucidates the relationship between various irradiation conditions and the final states of irradiation-induced defects.

关键词: displacement cascades, diamond, molecular dynamics, temperature effect

Abstract: Diamond is a promising semiconductor material for future space exploration, owing to its unique atomic and electronic structures. However, diamond materials and related devices still suffer from irradiation damage under space irradiation involving high-energy irradiating particles. The study of the generation and evolution of point defects can help understand the irradiation damage mechanisms in diamond. This study systematically investigated the defect dynamics of diamond in 162 crystallographic directions uniformly selected on a spherical surface using molecular dynamics simulations, with primary knock-on atom (PKA) energies up to 20 keV, and temperatures ranging from 300 K to 1800 K. The results reveal that the displacement threshold energy of diamond changes periodically with crystallographic directions, which is related to the shape of potential energy surface along that direction. Additionally, the number of residual defects correlates positively with PKA energy. However, temperature has dual competing effects: while it enhances the probability of atomic displacement, it simultaneously suppresses the probability of defect formation by accelerating defect recombination. The calculation of sparse radial distribution function indicates that the defect distribution shows a certain degree of similarity in the short-range region across different PKA energies. As the PKA energy increases, defect clusters tend to become larger in size and more numerous in quantity. This study systematically investigates the anisotropy of displacement threshold energy and elucidates the relationship between various irradiation conditions and the final states of irradiation-induced defects.

Key words: displacement cascades, diamond, molecular dynamics, temperature effect

中图分类号:  (Molecular dynamics calculations (Car-Parrinello) and other numerical simulations)

  • 71.15.Pd
61.80.Lj (Atom and molecule irradiation effects)