中国物理B ›› 2024, Vol. 33 ›› Issue (8): 86101-086101.doi: 10.1088/1674-1056/ad4ff9

所属专题: SPECIAL TOPIC — Stephen J. Pennycook: A research life in atomic-resolution STEM and EELS

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Three-dimensional crystal defect imaging by STEM depth sectioning

Ryo Ishikawa†, Naoya Shibata, and Yuichi Ikuhara   

  1. Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
  • 收稿日期:2024-04-22 修回日期:2024-05-23 出版日期:2024-08-15 发布日期:2024-07-15
  • 通讯作者: Ryo Ishikawa E-mail:ishikawa@sigma.t.u-tokyo.ac.jp
  • 基金资助:
    Project supported by JST-PRESTO (Grant No. JPMJPR1871), JST-FOREST (Grant No. JPMJFR2033), JSTERATO (Grant No. JPMJER2202), KAKENHI JSPS (Grant Nos. JP19H05788, JP21H01614, and JP24H00373), and “Next Generation Electron Microscopy” social cooperation program at the University of Tokyo.

Three-dimensional crystal defect imaging by STEM depth sectioning

Ryo Ishikawa†, Naoya Shibata, and Yuichi Ikuhara   

  1. Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
  • Received:2024-04-22 Revised:2024-05-23 Online:2024-08-15 Published:2024-07-15
  • Contact: Ryo Ishikawa E-mail:ishikawa@sigma.t.u-tokyo.ac.jp
  • Supported by:
    Project supported by JST-PRESTO (Grant No. JPMJPR1871), JST-FOREST (Grant No. JPMJFR2033), JSTERATO (Grant No. JPMJER2202), KAKENHI JSPS (Grant Nos. JP19H05788, JP21H01614, and JP24H00373), and “Next Generation Electron Microscopy” social cooperation program at the University of Tokyo.

摘要: One of the major innovations awaiting in electron microscopy is full three-dimensional imaging at atomic resolution. Despite the success of aberration correction to deep sub-ångström lateral resolution, spatial resolution in depth is still far from atomic resolution. In scanning transmission electron microscopy (STEM), this poor depth resolution is due to the limitation of the illumination angle. To overcome this physical limitation, it is essential to implement a next-generation aberration corrector in STEM that can significantly improve the depth resolution. This review discusses the capability of depth sectioning for three-dimensional imaging combined with large-angle illumination STEM. Furthermore, the statistical analysis approach remarkably improves the depth resolution, making it possible to achieve three-dimensional atomic resolution imaging at oxide surfaces. We will also discuss the future prospects of three-dimensional imaging at atomic resolution by STEM depth sectioning.

关键词: atomic-resolution STEM, STEM depth sectioning, depth resolution, dopants, surface topography

Abstract: One of the major innovations awaiting in electron microscopy is full three-dimensional imaging at atomic resolution. Despite the success of aberration correction to deep sub-ångström lateral resolution, spatial resolution in depth is still far from atomic resolution. In scanning transmission electron microscopy (STEM), this poor depth resolution is due to the limitation of the illumination angle. To overcome this physical limitation, it is essential to implement a next-generation aberration corrector in STEM that can significantly improve the depth resolution. This review discusses the capability of depth sectioning for three-dimensional imaging combined with large-angle illumination STEM. Furthermore, the statistical analysis approach remarkably improves the depth resolution, making it possible to achieve three-dimensional atomic resolution imaging at oxide surfaces. We will also discuss the future prospects of three-dimensional imaging at atomic resolution by STEM depth sectioning.

Key words: atomic-resolution STEM, STEM depth sectioning, depth resolution, dopants, surface topography

中图分类号:  (Electron diffraction and scattering)

  • 61.05.J-
68.47.Gh (Oxide surfaces) 81.70.Jb (Chemical composition analysis, chemical depth and dopant profiling) 61.72.Ff (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))