Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects

doi:10.1088/1674-1056/acc05b

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/acc05b

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Ye Tu(涂野)¹, Yong Li(李勇)², and Guanchao Yin(殷官超)^1,†

1 School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
2 Faculty of Physics, University of Duisburg-Essen and CENIDE, Forsthausweg 2, D-47057 Duisburg, Germany

收稿日期:2022-11-29 修回日期:2023-01-25 接受日期:2023-03-02 出版日期:2023-05-17 发布日期:2023-06-07
通讯作者: Guanchao Yin E-mail:guanchao.yin@whut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51802240).

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Ye Tu(涂野)¹, Yong Li(李勇)², and Guanchao Yin(殷官超)^1,†

1 School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
2 Faculty of Physics, University of Duisburg-Essen and CENIDE, Forsthausweg 2, D-47057 Duisburg, Germany

Received:2022-11-29 Revised:2023-01-25 Accepted:2023-03-02 Online:2023-05-17 Published:2023-06-07
Contact: Guanchao Yin E-mail:guanchao.yin@whut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51802240).

摘要/Abstract

摘要： Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier (E_h> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness, the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous. The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.

关键词: ultrathin cigse solar cells, Schottky back contact, back interface passivation, back recombination, hole blocking

Abstract: Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier (E_h> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness, the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous. The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.

Key words: ultrathin cigse solar cells, Schottky back contact, back interface passivation, back recombination, hole blocking

中图分类号: (III-V semiconductors)

81.05.Ea

73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Mr (Semiconductor-electrolyte contacts)

Ye Tu(涂野), Yong Li(李勇), and Guanchao Yin(殷官超). Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects[J]. 中国物理B, 2023, 32(6): 68101-068101.

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Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

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