Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices

doi:10.1088/1674-1056/acac1a

中国物理B ›› 2023, Vol. 32 ›› Issue (4): 47401-047401.doi: 10.1088/1674-1056/acac1a

Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices

Di Liu(刘迪)^1,2, Xingyu Wang(王兴玉)^1,2, Zezhong Li(李泽众)^1,2, Xiaoyan Ma(马肖燕)^1,2, and Shiliang Li(李世亮)^1,2,3,†

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2022-11-04 修回日期:2022-12-09 接受日期:2022-12-16 出版日期:2023-03-10 发布日期:2023-03-14
通讯作者: Shiliang Li E-mail:slli@iphy.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403402, 2021YFA1400401, 2020YFA0406003, and 2017YFA0302903), the National Natural Science Foundation of China (Grant Nos. 11961160699 and 11874401), and the Chinese Academy of Sciences (Grant Nos. XDB33000000 and GJTD-2020-01).

Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices

Di Liu(刘迪)^1,2, Xingyu Wang(王兴玉)^1,2, Zezhong Li(李泽众)^1,2, Xiaoyan Ma(马肖燕)^1,2, and Shiliang Li(李世亮)^1,2,3,†

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2022-11-04 Revised:2022-12-09 Accepted:2022-12-16 Online:2023-03-10 Published:2023-03-14
Contact: Shiliang Li E-mail:slli@iphy.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403402, 2021YFA1400401, 2020YFA0406003, and 2017YFA0302903), the National Natural Science Foundation of China (Grant Nos. 11961160699 and 11874401), and the Chinese Academy of Sciences (Grant Nos. XDB33000000 and GJTD-2020-01).

摘要/Abstract

摘要： Uniaxial pressure or strain can introduce a symmetry-breaking distortion on the lattice and may alter the ground states of a material. Compared to hydrostatic pressure, a unique feature of the uniaxial-pressure measurements is that a tensile force can be applied and thus a "negative" pressure can be achieved. In doing so, both ends of the sample are usually glued on the frame of the uniaxial-pressure device. The maximum force that can be applied onto the sample is sometimes limited by the shear strength of the glue, the quality of the interface between the sample and the glue, etc. Here we use focused ion beam to reduce the width of the middle part of the sample, which can significantly increase the effective pressure applied on the sample. By applying this technique to a home-made piezobender-based uniaxial-pressure device, we can easily increase the effective pressure by one or two orders of magnitude as shown by the change of the superconducting transition temperature of an iron-based superconductor. Our method thus provides a possible way to increase the upper limit of the pressure for the uniaxial-pressure devices.

关键词: uniaxial pressure, iron-based superconductors, focused-ion-beam

Abstract: Uniaxial pressure or strain can introduce a symmetry-breaking distortion on the lattice and may alter the ground states of a material. Compared to hydrostatic pressure, a unique feature of the uniaxial-pressure measurements is that a tensile force can be applied and thus a "negative" pressure can be achieved. In doing so, both ends of the sample are usually glued on the frame of the uniaxial-pressure device. The maximum force that can be applied onto the sample is sometimes limited by the shear strength of the glue, the quality of the interface between the sample and the glue, etc. Here we use focused ion beam to reduce the width of the middle part of the sample, which can significantly increase the effective pressure applied on the sample. By applying this technique to a home-made piezobender-based uniaxial-pressure device, we can easily increase the effective pressure by one or two orders of magnitude as shown by the change of the superconducting transition temperature of an iron-based superconductor. Our method thus provides a possible way to increase the upper limit of the pressure for the uniaxial-pressure devices.

Key words: uniaxial pressure, iron-based superconductors, focused-ion-beam

中图分类号: (Effects of pressure)

74.62.Fj

Di Liu(刘迪), Xingyu Wang(王兴玉), Zezhong Li(李泽众), Xiaoyan Ma(马肖燕), and Shiliang Li(李世亮). Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices[J]. 中国物理B, 2023, 32(4): 47401-047401.

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Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices

Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices

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