Direct visualization of structural defects in 2D semiconductors

doi:10.1088/1674-1056/ac6738

中国物理B ›› 2022, Vol. 31 ›› Issue (7): 76105-076105.doi: 10.1088/1674-1056/ac6738

Direct visualization of structural defects in 2D semiconductors

Yutuo Guo(郭玉拓)^1,2, Qinqin Wang(王琴琴)^1,2, Xiaomei Li(李晓梅)^1,2, Zheng Wei(魏争)^1,2, Lu Li(李璐)^1,2, Yalin Peng(彭雅琳)^1,2, Wei Yang(杨威)^1,2, Rong Yang(杨蓉)^1,2,3, Dongxia Shi(时东霞)^1,2, Xuedong Bai(白雪冬)^1,2, Luojun Du(杜罗军)^1,2, and Guangyu Zhang(张广宇)^1,2,3,†

1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Science, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China

收稿日期:2022-03-15 修回日期:2022-04-06 接受日期:2022-04-14 出版日期:2022-06-09 发布日期:2022-07-19
通讯作者: Guangyu Zhang E-mail:gyzhang@iphy.ac.cn
基金资助:
Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001), the Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant No. XDB30000000), and the National Natural Science Foundation of China (Grant Nos. 61888102 and 11834017).

Direct visualization of structural defects in 2D semiconductors

1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Science, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China

Received:2022-03-15 Revised:2022-04-06 Accepted:2022-04-14 Online:2022-06-09 Published:2022-07-19
Contact: Guangyu Zhang E-mail:gyzhang@iphy.ac.cn
Supported by:
Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001), the Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant No. XDB30000000), and the National Natural Science Foundation of China (Grant Nos. 61888102 and 11834017).

摘要/Abstract

摘要： Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand.

关键词: structural defects, direct visualization, molybdenum disulfide, anisotropic etching, edges

Abstract: Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand.

Key words: structural defects, direct visualization, molybdenum disulfide, anisotropic etching, edges

中图分类号: (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))

61.72.Ff

68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Yutuo Guo(郭玉拓), Qinqin Wang(王琴琴), Xiaomei Li(李晓梅), Zheng Wei(魏争), Lu Li(李璐), Yalin Peng(彭雅琳), Wei Yang(杨威), Rong Yang(杨蓉), Dongxia Shi(时东霞), Xuedong Bai(白雪冬), Luojun Du(杜罗军), and Guangyu Zhang(张广宇). Direct visualization of structural defects in 2D semiconductors[J]. 中国物理B, 2022, 31(7): 76105-076105.

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Direct visualization of structural defects in 2D semiconductors

Direct visualization of structural defects in 2D semiconductors

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