A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

doi:10.1088/1674-1056/ac0038

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 18504-018504.doi: 10.1088/1674-1056/ac0038

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇)^†, Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读)

Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China

收稿日期:2021-04-13 修回日期:2021-05-05 接受日期:2021-05-12 出版日期:2021-12-03 发布日期:2021-12-23
通讯作者: Zhi-Yong Huang E-mail:zyhuang@cqu.edu.cn
基金资助:
Project supported by the Natural Science Foundation Project of Chongqing Science and Technology Commission, China (Grant No. cstc2020jcyj-msxmX0243), the Fundamental Research Funds for the Central Universities, China (Grant No. 2020CDJ-LHZZ-024), and the Chongqing Technology Innovation and Application Development Key Project, China (Grant No. cstc2019jscx-zdztzxX0051).

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇)^†, Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读)

Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China

Received:2021-04-13 Revised:2021-05-05 Accepted:2021-05-12 Online:2021-12-03 Published:2021-12-23
Contact: Zhi-Yong Huang E-mail:zyhuang@cqu.edu.cn
Supported by:
Project supported by the Natural Science Foundation Project of Chongqing Science and Technology Commission, China (Grant No. cstc2020jcyj-msxmX0243), the Fundamental Research Funds for the Central Universities, China (Grant No. 2020CDJ-LHZZ-024), and the Chongqing Technology Innovation and Application Development Key Project, China (Grant No. cstc2019jscx-zdztzxX0051).

摘要/Abstract

摘要： A three-dimensional (3D) silicon-carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a heterojunction diode (HJD-TMOS) is proposed and studied in this work. The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate. When the device is in the turn-on state, the body parasitic diode can be effectively controlled by the embedded HJD, the switching loss thus decreases for the device. Moreover, a highly-doped P⁺ layer is encircled the gate oxide on the same side as the HJD and under the gate oxide, which is used to lighten the electric field concentration and improve the reliability of gate oxide layer. Physical mechanism for the HJD-TMOS is analyzed. Comparing with the conventional device with the same level of on-resistance, the breakdown voltage of the HJD-TMOS is improved by 23.4%, and the miller charge and the switching loss decrease by 43.2% and 48.6%, respectively.

关键词: heterojunction diode, SiC MOSFET, switching loss, on-state resistance

Abstract: A three-dimensional (3D) silicon-carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a heterojunction diode (HJD-TMOS) is proposed and studied in this work. The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate. When the device is in the turn-on state, the body parasitic diode can be effectively controlled by the embedded HJD, the switching loss thus decreases for the device. Moreover, a highly-doped P⁺ layer is encircled the gate oxide on the same side as the HJD and under the gate oxide, which is used to lighten the electric field concentration and improve the reliability of gate oxide layer. Physical mechanism for the HJD-TMOS is analyzed. Comparing with the conventional device with the same level of on-resistance, the breakdown voltage of the HJD-TMOS is improved by 23.4%, and the miller charge and the switching loss decrease by 43.2% and 48.6%, respectively.

Key words: heterojunction diode, SiC MOSFET, switching loss, on-state resistance

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 51.50.+v (Electrical properties)

Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读). A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode[J]. 中国物理B, 2022, 31(1): 18504-018504.

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A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

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