[1] |
Jia-Jun Mo(莫家俊), Pu-Yue Xia(夏溥越), Ji-Yu Shen(沈纪宇), Hai-Wen Chen(陈海文), Ze-Yi Lu(陆泽一), Shi-Yu Xu(徐诗语), Qing-Hang Zhang(张庆航), Yan-Fang Xia(夏艳芳), Min Liu(刘敏). Abnormal magnetic behavior of prussian blue analogs modified with multi-walled carbon nanotubes[J]. 中国物理B, 2023, 32(4): 47503-047503. |
[2] |
Zhi Yang(杨质), Yuanyuan Chen(陈源源), Weiqiang Liu(刘卫强)†, Yuqing Li(李玉卿), Liying Cong(丛利颖), Qiong Wu(吴琼), Hongguo Zhang(张红国), Qingmei Lu(路清梅), Dongtao Zhang(张东涛), and Ming Yue(岳明)‡. Micromagnetic study of magnetization reversal in inhomogeneous permanent magnets[J]. 中国物理B, 2023, 32(4): 47504-047504. |
[3] |
Simin An(安思敏), Xingyu Gao(高兴誉), Xian Zhang(张弦), Xin Chen(陈欣), Jiawei Xian(咸家伟), Yu Liu(刘瑜), Bo Sun(孙博), Haifeng Liu(刘海风), and Haifeng Song(宋海峰). Coexisting lattice contractions and expansions with decreasing thicknesses of Cu (100) nano-films[J]. 中国物理B, 2023, 32(3): 36804-036804. |
[4] |
Shijie Zhang(张世杰), Weimin Zhou(周维民), Yan Yin(银燕), Debin Zou(邹德滨), Na Zhao(赵娜), Duan Xie(谢端), and Hongbin Zhuo(卓红斌). Intense low-noise terahertz generation by relativistic laser irradiating near-critical-density plasma[J]. 中国物理B, 2023, 32(3): 35201-035201. |
[5] |
Junqi Lai(赖君奇), Bowen Chen(陈博文), Zhiwei Xing(邢志伟), Xuefei Li(李雪飞), Shulong Lu(陆书龙), Qi Chen(陈琪), and Liwei Chen(陈立桅). Quantitative measurement of the charge carrier concentration using dielectric force microscopy[J]. 中国物理B, 2023, 32(3): 37202-037202. |
[6] |
Tao-Wen Xiong(熊涛文), Xiao-Ping Chen(陈小平), Ye-Ping Lin(林也平), Xin-Fu He(贺新福), Wen Yang(杨文), Wang-Yu Hu(胡望宇), Fei Gao(高飞), and Hui-Qiu Deng(邓辉球). Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy[J]. 中国物理B, 2023, 32(2): 20206-020206. |
[7] |
Wen-Hao Lin(林文浩), Ji-Quan Li(李继全), J Garcia, and S Mazzi. Gyrokinetic simulation of low-n Alfvénic modes in tokamak HL-2A plasmas[J]. 中国物理B, 2023, 32(2): 25202-025202. |
[8] |
Xuanhao Fu(傅宣豪) and Xin Zhou(周昕). Different roles of surfaces' interaction on lattice mismatched/matched surfaces in facilitating ice nucleation[J]. 中国物理B, 2023, 32(2): 28202-028202. |
[9] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
[10] |
Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell[J]. 中国物理B, 2023, 32(2): 28801-028801. |
[11] |
Yang-Hui Hu(胡杨慧), Yu-Bo Bi(毕钰帛), Jun Zhang(张俊), Li-Ping Lian(练丽萍), Wei-Guo Song(宋卫国), and Wei Gao(高伟). Effect of a static pedestrian as an exit obstacle on evacuation[J]. 中国物理B, 2023, 32(1): 18901-018901. |
[12] |
Zhencen He(何贞岑), Jiyan Zhang(张继彦), Jiamin Yang(杨家敏), Bing Yan(闫冰), and Zhimin Hu(胡智民). Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas[J]. 中国物理B, 2023, 32(1): 15202-015202. |
[13] |
Mengjiao Wu(吴梦娇), Huishu Ma(马慧姝), Haiping Fang(方海平), Li Yang(阳丽), and Xiaoling Lei(雷晓玲). Adsorption dynamics of double-stranded DNA on a graphene oxide surface with both large unoxidized and oxidized regions[J]. 中国物理B, 2023, 32(1): 18701-018701. |
[14] |
Xue-Yi Guo(郭学仪), Shang-Shu Li(李尚书), Xiao Xiao(效骁), Zhong-Cheng Xiang(相忠诚), Zi-Yong Ge(葛自勇), He-Kang Li(李贺康), Peng-Tao Song(宋鹏涛), Yi Peng(彭益), Zhan Wang(王战), Kai Xu(许凯), Pan Zhang(张潘), Lei Wang(王磊), Dong-Ning Zheng(郑东宁), and Heng Fan(范桁). Variational quantum simulation of thermal statistical states on a superconducting quantum processer[J]. 中国物理B, 2023, 32(1): 10307-010307. |
[15] |
Linlin Li(李林霖), Jia Luo(罗佳), Jing Xia(夏静), Yan Zhou(周艳), Xiaoxi Liu(刘小晰), and Guoping Zhao(赵国平). Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet[J]. 中国物理B, 2023, 32(1): 17506-017506. |