Resistive switching memory for high density storage and computing

doi:10.1088/1674-1056/abe0c4

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 58702-058702.doi: 10.1088/1674-1056/abe0c4

所属专题： SPECIAL TOPIC — Physics in neuromorphic devices

Resistive switching memory for high density storage and computing

Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳)^†, Qi Liu(刘琦), and Ming Liu(刘明)

Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2020-05-26 修回日期:2021-01-11 接受日期:2021-01-28 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Hang-Bing Lv E-mail:lvhangbing@ime.ac.cn
基金资助:
Project supported in part by the National Key R&D Program of China (Grant Nos. 2018YFB0407501 and 2016YFA0201800), the National Natural Science Foundation of China (Grant Nos. 61804173, 61922083, 61804167, 61904200, and 61821091), and the fourth China Association for Science and Technology Youth Talent Support Project (Grant No. 2019QNRC001).

Resistive switching memory for high density storage and computing

Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳)^†, Qi Liu(刘琦), and Ming Liu(刘明)

Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

Received:2020-05-26 Revised:2021-01-11 Accepted:2021-01-28 Online:2021-05-14 Published:2021-05-14
Contact: Hang-Bing Lv E-mail:lvhangbing@ime.ac.cn
Supported by:
Project supported in part by the National Key R&D Program of China (Grant Nos. 2018YFB0407501 and 2016YFA0201800), the National Natural Science Foundation of China (Grant Nos. 61804173, 61922083, 61804167, 61904200, and 61821091), and the fourth China Association for Science and Technology Youth Talent Support Project (Grant No. 2019QNRC001).

摘要/Abstract

摘要： The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I-V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

关键词: resistive switching memory (RRAM), three-dimensional (3D) integration, reliability, computing

Abstract: The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I-V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

Key words: resistive switching memory (RRAM), three-dimensional (3D) integration, reliability, computing

中图分类号: (Superconducting logic elements and memory devices; microelectronic circuits)

85.25.Hv

87.19.lv (Learning and memory) 73.40.Rw (Metal-insulator-metal structures)

Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明). Resistive switching memory for high density storage and computing[J]. 中国物理B, 2021, 30(5): 58702-058702.

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Resistive switching memory for high density storage and computing

Resistive switching memory for high density storage and computing

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