中国物理B ›› 2021, Vol. 30 ›› Issue (5): 56110-056110.doi: 10.1088/1674-1056/abf107

所属专题： SPECIAL TOPIC — Ion beam modification of materials and applications

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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation

Wen-Si Ai(艾文思)1,2, Jie Liu(刘杰)1,2,†, Qian Feng(冯倩)3,‡, Peng-Fei Zhai(翟鹏飞)1,2, Pei-Pei Hu(胡培培)1,2, Jian Zeng(曾健)1,2, Sheng-Xia Zhang(张胜霞)1,2, Zong-Zhen Li(李宗臻)1,2, Li Liu(刘丽)1,2, Xiao-Yu Yan(闫晓宇)1,2, and You-Mei Sun(孙友梅)1,2   

  1. 1 Institute of Modern Physics, Chinese Academy of Sciences(CAS), Lanzhou 730000, China;
    2 School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2021-02-08 修回日期:2021-03-18 接受日期:2021-03-23 出版日期:2021-05-14 发布日期:2021-05-14
  • 通讯作者: Jie Liu, Qian Feng E-mail:j.liu@impcas.ac.cn;qfeng@mail.xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 11690041, and 12075290), China National Postdoctoral Program for Innovative Talents (Grant No. BX20200340), China Postdoctoral Science Foundation (Grant No. 2020M673539), CAS ''Light of West China" Program, and the Youth Innovation Promotion Association of Chinese Academy of Sciences (CAS) (Grant No. 2020412).

Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation

Wen-Si Ai(艾文思)1,2, Jie Liu(刘杰)1,2,†, Qian Feng(冯倩)3,‡, Peng-Fei Zhai(翟鹏飞)1,2, Pei-Pei Hu(胡培培)1,2, Jian Zeng(曾健)1,2, Sheng-Xia Zhang(张胜霞)1,2, Zong-Zhen Li(李宗臻)1,2, Li Liu(刘丽)1,2, Xiao-Yu Yan(闫晓宇)1,2, and You-Mei Sun(孙友梅)1,2   

  1. 1 Institute of Modern Physics, Chinese Academy of Sciences(CAS), Lanzhou 730000, China;
    2 School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2021-02-08 Revised:2021-03-18 Accepted:2021-03-23 Online:2021-05-14 Published:2021-05-14
  • Contact: Jie Liu, Qian Feng E-mail:j.liu@impcas.ac.cn;qfeng@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 11690041, and 12075290), China National Postdoctoral Program for Innovative Talents (Grant No. BX20200340), China Postdoctoral Science Foundation (Grant No. 2020M673539), CAS ''Light of West China" Program, and the Youth Innovation Promotion Association of Chinese Academy of Sciences (CAS) (Grant No. 2020412).

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摘要： The electrical characteristics and microstructures of β-Ga2O3 Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that β-Ga2O3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×106-1.3×107 cm-1. Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga2O3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, the β-Ga2O3 SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.

关键词: β-Ga2O3 Schottky barrier diode, swift heavy ions, reliability degradation, amorphous latent track

Abstract: The electrical characteristics and microstructures of β-Ga2O3 Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that β-Ga2O3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×106-1.3×107 cm-1. Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga2O3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, the β-Ga2O3 SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.

Key words: β-Ga2O3 Schottky barrier diode, swift heavy ions, reliability degradation, amorphous latent track

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
61.82.Fk (Semiconductors) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)