中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87803-087803.doi: 10.1088/1674-1056/aba273

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇    下一篇

Thermal stability of magnetron sputtering Ge-Ga-S films

Lei Niu(牛磊), Yimin Chen(陈益敏), Xiang Shen(沈祥), Tiefeng Xu(徐铁峰)   

  1. 1 Laboratory of Infrared Materials and Devices&Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 315211, China;
    2 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
  • 收稿日期:2020-04-10 修回日期:2020-06-17 出版日期:2020-08-05 发布日期:2020-08-05
  • 通讯作者: Yimin Chen, Xiang Shen E-mail:chenyimin@nbu.edu.cn;shenxiang@nbu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61675105, 61775111, and 61904091), Ningbo Optoelectronic Materials and Devices Laboratory (Grant No. 2009B21007), and K. C. Wong Magna Fund in Ningbo University of China.

Thermal stability of magnetron sputtering Ge-Ga-S films

Lei Niu(牛磊)1, Yimin Chen(陈益敏)1,2, Xiang Shen(沈祥)1, Tiefeng Xu(徐铁峰)1   

  1. 1 Laboratory of Infrared Materials and Devices&Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 315211, China;
    2 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
  • Received:2020-04-10 Revised:2020-06-17 Online:2020-08-05 Published:2020-08-05
  • Contact: Yimin Chen, Xiang Shen E-mail:chenyimin@nbu.edu.cn;shenxiang@nbu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61675105, 61775111, and 61904091), Ningbo Optoelectronic Materials and Devices Laboratory (Grant No. 2009B21007), and K. C. Wong Magna Fund in Ningbo University of China.

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摘要： Ge-Ga-S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94. The physical properties of the Ge-Ga-S films, including optical band gap, refractive index, and thickness, vary with the time of heat treatment. Based on the analysis of the topology model, it is concluded that the Ge-Ga-S thin films with components close to the stoichiometric ratio can form the most Ga-S bonds and Ga-S bonds, and the physical properties of the Ge27.3Ga6.3S66.3 (MCN=2.62) film are the most stable. This is an important reference for thin film photonic devices.

关键词: chalcogenide thin films, refractive index, optical band gap, thermal stability

Abstract: Ge-Ga-S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94. The physical properties of the Ge-Ga-S films, including optical band gap, refractive index, and thickness, vary with the time of heat treatment. Based on the analysis of the topology model, it is concluded that the Ge-Ga-S thin films with components close to the stoichiometric ratio can form the most Ga-S bonds and Ga-S bonds, and the physical properties of the Ge27.3Ga6.3S66.3 (MCN=2.62) film are the most stable. This is an important reference for thin film photonic devices.

Key words: chalcogenide thin films, refractive index, optical band gap, thermal stability

中图分类号:  (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

  • 78.20.Ci
78.40.Fy (Semiconductors) 78.40.-q (Absorption and reflection spectra: visible and ultraviolet)