中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87803-087803.doi: 10.1088/1674-1056/aba273
• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇 下一篇
Lei Niu(牛磊), Yimin Chen(陈益敏), Xiang Shen(沈祥), Tiefeng Xu(徐铁峰)
Lei Niu(牛磊)1, Yimin Chen(陈益敏)1,2, Xiang Shen(沈祥)1, Tiefeng Xu(徐铁峰)1
摘要: Ge-Ga-S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94. The physical properties of the Ge-Ga-S films, including optical band gap, refractive index, and thickness, vary with the time of heat treatment. Based on the analysis of the topology model, it is concluded that the Ge-Ga-S thin films with components close to the stoichiometric ratio can form the most Ga-S bonds and Ga-S bonds, and the physical properties of the Ge27.3Ga6.3S66.3 (MCN=2.62) film are the most stable. This is an important reference for thin film photonic devices.
中图分类号: (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))